Ilan Shalish Home Page - Publications

Dr. Ilan Shalish

Nanoelectronics Group

Publications

Varun Thakur, Dor Benafsha, Yury Turkulets, Almog R. Azulay, Xin Liang, R.S. Goldman, Ilan Shalish.
"Homologous Self-Assembled Superlattices: What Causes their Periodic Polarity Switching?"
Advanced Physics Research, 3, 2300039 (2024)

https://doi.org/10.1002/apxr.202300039

Y. Turkulets, N. Shauloff, O. H. Chaulker, Y. Shapira, R. Jelinek, I. Shalish.
"The GaN(0001) yellow-luminescence-related surface state and its interaction with air"
Surfaces and Interfaces , 38, 102834 (2023)

N. Shauloff, R. Bisht, Y. Turkuletz, R. Manikandan, A. Morag, A. Lehrer. J. Baraban. I. Shalish. R. Jelinek.
"Multispectral and circular polarization-sensitive carbon dot polydiacetylene capacitive photodetector"
Small, 2206519 (2022)

L. Dery, N. Shauloff, Y. Turkulets, I. Shalish, R. Jelinek, D. Mandler,
"Size-Selective Detection of Nanoparticles in Solution and Air by Imprinting"
ACS Sensors, 7, 296 (2022)

A. De Adhikari, N. Shauloff, Y. Turkulets, I. Shalish, R. Jelinek,
"Tungsten-disulfide/polyaniline high-frequency supercapacitors"
Advanced Electronic Materials , 2021, 2100025 (2021)

Y. Turkulets, I. Shalish,
"Surface properties of semiconductors from post-illumination photovoltage transient"
Surfaces and Interfaces , 24, 101052 (2021)

N. Yehuda, Y. Turkulets, I. Shalish, A. Kushmaro, S. (Mails) Arad,
"Red Microalgal Sulfated Polysaccharide-Cu2O Complex: Characterization and Bioactivity"
ACS Applied Materials & Interfaces, 13, 7070 (2021)

A.R. Azulay, Y. Turkulets, D. Del Gaudio, R.S. Goldman, I. Shalish,
"Why do nanowires grow vertically-aligned in the absence of epitaxy?"
Scientific Reports, 10, 6554 (2020)

D. Del Gaudio, C.T. Boone, K. Sallans, E. Mason, A.J. Williamson, S. Yarlagadda, Y. Turkulets, J.T. Heron, I. Shalish, R.S. Goldman,
"Morphological design of complex oxides during pulsed-laser deposition: The role of plasma-plume expansion"
Journal of Applied Physics, 126, 184301 (2019)

Y. Turkulets, I. Shalish,
"Surface states in AlGaN/GaN high electron mobility transistors: Quantitative energetic profiles and dynamics of the surface Fermi level"
Applied Physics Letters, 115, 023502 (2019)

Y. Turkulets and I. Shalish
"Polar-charge-induced self-assembly: non-isotropic crystal growth mode in polar semiconductors"
Physical Review Materials , 3, 033403 (2019)

Y. Turkulets and I. Shalish
"Mobility and sheet charge in high electron mobility transistor quantum wells from photon-induced transconductance"
IEEE Electron Device Letters , 40, 383 (2019).

I. Shalish
"Effect of parasitic polytypes on ballistic electron transport in chemical vapor deposition grown 6H-SiC epitaxial layers"
Advanced Materials Letters, 10, 465 (2019).

Y. Turkulets and I. Shalish
"Franz-Keldysh effect in semiconductor built-in fields: Doping concentration and space charge region characterization"
Journal of Applied Physics, 124, 075102 (2018)

B. Chervonni, O. Aktushev, E. Ojalvo, Y. Knafo, Y. Turkulets, and I. Shalish
"Fast Estimation of Channel Temperature in GaN High Electron Mobility Transistor under RF Operating Conditions"
Semicond. Sci. Technol. 33, 095024 (2018)

Digital Object Identifier 10.1088/1361-6641/aad539

Y. Turkulets and I. Shalish
"Contactless method to measure 2DEG charge density and band structure in HEMT structures"
Journal of Electron Device Society ,6, 703 (2018)

Digital Object Identifier 10.1109/JEDS.2018.2841374

A. Itzhak, E. Teblum, O. Girshevitz, S. Okashy, Y. Turkulets, L. Burlaka, G. Cohen-Taguri, E. Shawat Avraham, M. Noked, I. Shalish, G.D. Nessim.
"Digenite (Cu9S5): layered p-type semiconductor grown by reactive annealing of copper"
Chemistry of Materials , 30, 2379 (2018)

Y. Turkulets and I. Shalish
"Probing dynamic behavior of electric fields and band diagrams in complex semiconductor heterostructures"
Journal of Applied Physics, 123, 024301 (2017)

Y. Turkulets, T. Bick, I. Shalish
"Double surface effect causes a peak in band-edge photocurrent spectra: a quantitative model"
Journal of Physics D: Applied Physics, 49, 365104 (2016)

R. Gurwitz, I. Shalish,
"Corrigendum: Method for electrical characterization of nanowires (2011 Nanotechnology 22 435705)"
Nanotechnology, 27, 339501 (2016)

Y. Turkulets, A. Silber, A. Ripp, M. Sokolovsky, I. Shalish,
"CMOS-compatible method for doping of buried vertical polysilicon structures by solid phase diffusion"
Applied Physics Letters, 108, 132101 (2016)

R. Gurwitz, R. Cohen, and I. Shalish
"Interaction of light with the ZnO surface: Photon induced oxygen “breathing,” oxygen vacancies, persistent photoconductivity, and persistent photovoltage"
Journal of Applied Physics, 115, 033701 (2014)

R. Gurwitz, G. Tuboul, B. Shikler, and I. Shalish
"High-temperature gold metallization for ZnO nanowire device on a SiC substrate"
Journal of Applied Physics, 111, 124307 (2012)

R. Gurwitz, A. Tavor, L. Karpeles, I. Shalish,
W. Yi, G. Seryogin, V. Narayanamurti,
"Bandgap and Band Discontinuity in Wurtzite/Zincblende GaAs Homomaterial Heterostructure"
Applied Physics Letters, 100, 191602 (2012)

R. Gurwitz, I. Shalish,
"Method for electrical characterization of nanowires"
Nanotechnology, 22, 435705 (2011)

J. Bao, I. Shalish, Z. Su, R. Gurwitz, F. Capasso, X. Wang, Z. Ren,
"Photoinduced oxygen release and persistent photoconductivity in ZnO nanowires"
Nanoscale Research Letters , 6, 404 (2011)

W. Yi, T. Kim, I. Shalish, M. Loncar, M.J. Aziz, V. Narayanamurti
"Room-temperature photoresponse of Schottky photodiodes based on GaNxAs1−x synthesized by ion implantation and pulsed-laser melting"
Applied Physics Letters , 97, 151103 (2010)

J. Yoon, A. M. Girgis, I. Shalish, L. R. Ram-Mohan, V. Narayanamurti
"Size-dependent impurity activation energy in GaN nanowires"Applied Physics Letters , 94, 142102 (2009)

I. Shalish, G. Seyogin, W.Yi, J. Bao, M.A Zimmler, E. Likovich, D.C. Bell, F. Capasso, V. Narayanamurti
"Epitaxial catalyst-free growth of InN Nanorods on c-plane sapphire"
Nanoscale Research Letters , 4, 519 (2009)

M.A Zimmler, J. Bao, I. Shalish, W. Yi, V. Narayanamurti, F. Capasso
"A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection"
Nanotechnology, 18, 395201 (2007)

Cover of Nanotechnology

Volume 18, Number 23, 13 June 2007

M.A Zimmler, J. Bao, I. Shalish, W. Yi, J. Yoon,
V. Narayanamurti, F. Capasso,
"Electroluminescence from single nanowires by tunnel injection:
an experimental study"
Nanotechnology, 18, 235205 (2007)

Selected as a "Featured Article"

Reported in "Nanotechnology Journal Highlights"

G. Seryogin, I. Shalish, W. Moberlychan, V. Narayanamurti,
"Catalytic hydride vapor phase epitaxy growth of GaN nanowires"
Nanotechnology, 16, 2342 (2005)

I. Appelbaum, K. J. Russell, I. Shalish, V. Narayanamurti,
M. P. Hanson and A. C. Gossard
"Ballistic hole emission luminescence"
Applied Physics Letters, 85, 2265 (2004)

Selected for the
Virtual Journal of Nanoscale Science & Technology, 10, (15)
(October 11, 2004)

Ilan Shalish, Henryk Temkin, and Venky Narayanamurti
"Size-dependent surface luminescence in ZnO nanowires"
Physical Review B, 69, 245401 (2004)

Copyright (2004) by The American Physical Society

Selected for the
Virtual Journal of Nanoscale Science & Technology, 9, (23)
(June 14, 2004)

I. Appelbaum, R. Sheth, I. Shalish, K.J. Russel, V. Narayanamurti
"Experimental Test of the Planar Tunneling Model for Ballistic
Electron Emission Spectroscopy"
Physical Review B, 67, 155307 (2003)

Copyright (2003) by The American Physical Society

Selected for the
Virtual Journal of Nanoscale Science & Technology, 7, (16)
(Apri 21, 2003)

Ilan Shalish
"Effect of van Hove singularities on the Photovoltage
Spectra of Semiconductors"
Physical Review B, 66, 165214 (2002)

I. Shalish, I. B. Altfeder and V. Narayanamurti
"Observations of Conduction Band Structure in 4H- and 6H-SiC"
Physical Review B, 65, 073104 (2002)

I. Shalish, C. E. M. de Oliveira, Y. Shapira and J. Salzman,
"Hall Photovoltage Deep Level Spectroscopy of GaN films"
Physical Review B, 64, 205313 (2001)

J. Yang, I. Shalish and Y. Shapira
"Photoinduced Charge Carriers at Surfaces and Interfaces of PPV with Au and GaAs"
Physical Review B, 64, 035325 (2001)

I. Shalish, L. Kronik, G. Segal, Y. Shapira,
S. Zamir, B. Meyler, J. Salzman,
"Grain boundary controlled transport in GaN layers",
Physical Review B, 61, 15573 (2000)

I. Shalish, L. Kronik, G. Segal, Y. Rosenwaks, Y. Shapira,
U. Tisch, J. Salzman,
"Yellow luminescence and related deep levels in unitentionally doped GaN films",
Physical Review B, 59, 9748 (1999)

I. Shalish, L. Kronik, G. Segal, Y. Shapira,
M. Eizenberg, J. Salzman,
"Yellow luminescence and Fermi level pinning in GaN films",
Applied Physics Letters ,77, 987 (2000)

I. Shalish, C. E. M. de Oliveira, L. Burstein, Y. Shapira and M. Eizenberg,
"Thermal Stability of Pt Schottky contacts with4H-SiC ",
Journal of Applied Physics, 88, 5724 (2000)

I. Shalish, Y. Shapira, L. Burstein, and J. Salzman
"Surface States and Surface Oxide in GaN layers",
Journal of Applied Physics, 89, 390 (2001)

I. Shalish and Y. Shapira,
"Stability of Schottky contacts with Ta-Si-N amorphous diffusion barriers and Au overlayers on 6H-SiC",
Journal of Vacuum Science and Technology B. 18, 2477 (2000)

I. Shalish and Yoram Shapira,
"Thermal stability of ternary Ti-Si-N diffusion barrier in contact with a Ti adhesion layer for Au metallization",
Journal of Vacuum Science and Technology B. 17, 166 (1999)

I. Shalish and Y. Shapira,
"Thermal Stability of Rhenium Schottky contact with 6H-SiC"
IEEE Electron Device Letters, 21 (12), 581 (2000)

I. Shalish, S.M. Gasser, E. Kolawa and M.-A. Nicolet,
"Gold metallization for aluminum nitride",
Thin Solid Films, 289 ,166 (1996)

Conference papers:

W. J. MoberlyChan, J. Tringe I. Shalish, V. Narayanamurti
"Role of Planar Defects in Compound Semiconductor Crystals: From Growth of Nanomasts & Nanosails to Processing Light Emission in DualBeam FIB/SEM"
Microscopy and Microanalysis, 13, S2 , 722 (2007)

W. J. MoberlyChan, G. Seryogin, I. Shalish, C-Y. Wen, S-F. Hu, X-J. Guo, V. Narayanamurti, F. Spaepen
"Imaging Defects in Nanometer-scale Semiconductor Crystals: Statistical Nucleation Events are Few in Small Crystals, but can Control Growth"
Microscopy and Microanalysis, 11, S2 , 1622 (2005)

I. Shalish, S.M. Gasser, E. Kolawa and M.-A. Nicolet,
"Stability of Schottky contacts with Ta-Si-N
amorphous diffusion barriers and Au
overlayers on 6H-SiC",
Transactions of the Third International High Temperature Electronics
Conference, Albuquerque, New Mexico, June 1996

S.M. Gasser, I. Shalish, E. Kolawa and M.-A. Nicolet,
"Differences between solid-state reaction of Pt
thin film deposited on C-and Si-face of 6H-SiC ",
Transactions of the Third International High Temperature Electronics
Conference, Albuquerque, New Mexico, June 1996

Patent:

I. Shalish, Y. Shapira, M. Eizenberg
"A New Technology for Thermodynamically Stable Contacts for Binary Wide Band-gap Semiconductors"
(A silicide-like metallization for binary wide-bandgap semiconductors)
United States Patent # 6410460