Ilan Shalish Home Page - Publications

Dr. Ilan Shalish

Nanoelectronics Group

Publications

R. Gurwitz, I. Shalish,
"Method for electrical characterization of nanowires" Nanotechnology, 22, 435705 (2011)

J. Bao, I. Shalish, Z. Su, R. Gurwitz, F. Capasso, X. Wang, Z. Ren,
"Photoinduced oxygen release and persistent photoconductivity in ZnO nanowires" Nanoscale Research Letters , 6, 404 (2011)

W. Yi, T. Kim, I. Shalish, M. Loncar, M.J. Aziz, V. Narayanamurti
"Room-temperature photoresponse of Schottky photodiodes based on GaNxAs1−x synthesized by ion implantation and pulsed-laser melting"
Applied Physics Letters , 97, 151103 (2010)

J. Yoon, A. M. Girgis, I. Shalish, L. R. Ram-Mohan, V. Narayanamurti
"Size-dependent impurity activation energy in GaN nanowires" Applied Physics Letters , 94, 142102 (2009)

I. Shalish, G. Seyogin, W.Yi, J. Bao, M.A Zimmler, E. Likovich, D.C. Bell, F. Capasso, V. Narayanamurti
"Epitaxial catalyst-free growth of InN Nanorods on c-plane sapphire"
Nanoscale Research Letters , 4, 519 (2009)

M.A Zimmler, J. Bao, I. Shalish, W. Yi, V. Narayanamurti, F. Capasso
"A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection"
Nanotechnology, 18, 395201 (2007)

Cover of Nanotechnology

Volume 18, Number 23, 13 June 2007

M.A Zimmler, J. Bao, I. Shalish, W. Yi, J. Yoon,
V. Narayanamurti, F. Capasso,
"Electroluminescence from single nanowires by tunnel injection:
an experimental study"
Nanotechnology, 18, 235205 (2007)

Selected as a "Featured Article"

Reported in "Nanotechnology Journal Highlights"

G. Seryogin, I. Shalish, W. Moberlychan, V. Narayanamurti,
"Catalytic hydride vapor phase epitaxy growth of GaN nanowires"
Nanotechnology, 16, 2342 (2005)

I. Appelbaum, K. J. Russell, I. Shalish, V. Narayanamurti,
M. P. Hanson and A. C. Gossard
"Ballistic hole emission luminescence"
Applied Physics Letters, 85, 2265 (2004)

Selected for the
Virtual Journal of Nanoscale Science & Technology, 10, (15)
(October 11, 2004)

Ilan Shalish, Henryk Temkin, and Venky Narayanamurti
"Size-dependent surface luminescence in ZnO nanowires"
Physical Review B, 69, 245401 (2004)

Copyright (2004) by The American Physical Society

Selected for the
Virtual Journal of Nanoscale Science & Technology, 9, (23)
(June 14, 2004)

I. Appelbaum, R. Sheth, I. Shalish, K.J. Russel, V. Narayanamurti
"Experimental Test of the Planar Tunneling Model for Ballistic
Electron Emission Spectroscopy"
Physical Review B, 67, 155307 (2003)

Copyright (2003) by The American Physical Society

Selected for the
Virtual Journal of Nanoscale Science & Technology, 7, (16)
(Apri 21, 2003)

Ilan Shalish
"Effect of van Hove singularities on the Photovoltage
Spectra of Semiconductors"
Physical Review B, 66, 165214 (2002)

I. Shalish, I. B. Altfeder and V. Narayanamurti
"Observations of Conduction Band Structure in 4H- and 6H-SiC"
Physical Review B, 65, 073104 (2002)

I. Shalish, C. E. M. de Oliveira, Y. Shapira and J. Salzman,
"Hall Photovoltage Deep Level Spectroscopy of GaN films"
Physical Review B, 64, 205313 (2001)

J. Yang, I. Shalish and Y. Shapira
"Photoinduced Charge Carriers at Surfaces and Interfaces of PPV with Au and GaAs"
Physical Review B, 64, 035325 (2001)

I. Shalish, L. Kronik, G. Segal, Y. Shapira,
S. Zamir, B. Meyler, J. Salzman,
"Grain boundary controlled transport in GaN layers",
Physical Review B, 61, 15573 (2000)

I. Shalish, L. Kronik, G. Segal, Y. Rosenwaks, Y. Shapira,
U. Tisch, J. Salzman,
"Yellow luminescence and related deep levels in unitentionally doped GaN films",
Physical Review B, 59, 9748 (1999)

I. Shalish, L. Kronik, G. Segal, Y. Shapira,
M. Eizenberg, J. Salzman,
"Yellow luminescence and Fermi level pinning in GaN films",
Applied Physics Letters ,77, 987 (2000)

I. Shalish, C. E. M. de Oliveira, L. Burstein, Y. Shapira and M. Eizenberg,
"Thermal Stability of Pt Schottky contacts with4H-SiC ",
Journal of Applied Physics, 88, 5724 (2000)

I. Shalish, Y. Shapira, L. Burstein, and J. Salzman
"Surface States and Surface Oxide in GaN layers",
Journal of Applied Physics, 89, 390 (2001)

I. Shalish and Y. Shapira,
"Stability of Schottky contacts with Ta-Si-N amorphous diffusion barriers and Au overlayers on 6H-SiC",
Journal of Vacuum Science and Technology B. 18, 2477 (2000)

I. Shalish and Yoram Shapira,
"Thermal stability of ternary Ti-Si-N diffusion barrier in contact with a Ti adhesion layer for Au metallization",
Journal of Vacuum Science and Technology B. 17, 166 (1999)

I. Shalish and Y. Shapira,
"Thermal Stability of Rhenium Schottky contact with 6H-SiC"
IEEE Electron Device Letters, 21 (12), 581 (2000)

I. Shalish, S.M. Gasser, E. Kolawa and M.-A. Nicolet,
"Gold metallization for aluminum nitride",
Thin Solid Films, 289 ,166 (1996)

Conference papers:

W. J. MoberlyChan, J. Tringe I. Shalish, V. Narayanamurti
"Role of Planar Defects in Compound Semiconductor Crystals: From Growth of Nanomasts & Nanosails to Processing Light Emission in DualBeam FIB/SEM"
Microscopy and Microanalysis, 13, S2 , 722 (2007)

W. J. MoberlyChan, G. Seryogin, I. Shalish, C-Y. Wen, S-F. Hu, X-J. Guo, V. Narayanamurti, F. Spaepen
"Imaging Defects in Nanometer-scale Semiconductor Crystals: Statistical Nucleation Events are Few in Small Crystals, but can Control Growth"
Microscopy and Microanalysis, 11, S2 , 1622 (2005)

I. Shalish, S.M. Gasser, E. Kolawa and M.-A. Nicolet,
"Stability of Schottky contacts with Ta-Si-N
amorphous diffusion barriers and Au
overlayers on 6H-SiC",
Transactions of the Third International High Temperature Electronics
Conference, Albuquerque, New Mexico, June 1996

S.M. Gasser, I. Shalish, E. Kolawa and M.-A. Nicolet,
"Differences between solid-state reaction of Pt
thin film deposited on C-and Si-face of 6H-SiC ",
Transactions of the Third International High Temperature Electronics
Conference, Albuquerque, New Mexico, June 1996

Patent:

I. Shalish, Y. Shapira, M. Eizenberg
"A New Technology for Thermodynamically Stable Contacts for Binary Wide Band-gap Semiconductors"
(A silicide-like metallization for binary wide-bandgap semiconductors)
United States Patent # 6410460